Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells

Author

Cavelier, M. ; Lourtioz, J.M. ; Xie, J.M. ; Chusseau, L. ; de Cremoux, B. ; Krawkowski, M. ; Rondi, D.

Author_Institution

Inst. d´´Electron. Fondamental, CNRS, Univ. Paris-Sud, Orsay, France

Volume

27

Issue

6

fYear

1991

fDate

3/14/1991 12:00:00 AM

Firstpage

513

Lastpage

515

Abstract

The gain compression and phase-amplitude coupling factors are measured along with the differential gain in GaInAs/GaInAsP quantum well lasers with three, five and seven wells. Results are compared with those obtained for a conventional bulk laser of the same quaternary material. The ultimate modulation bandwidth deduced from the measurements is shown to increase with the number of wells. For the seven well laser, the ultimate modulation bandwidth is found to reasonably approach that obtained for the bulk laser while the phase-amplitude coupling factor is 2.6 times smaller.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; GaInAs-GaInAsP lasers; differential gain; five well lasers; gain compression factor; modulation bandwidth; number of wells; phase-amplitude coupling factor; quantum well lasers; semiconductors; seven well laser; three well lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910322

Filename

84735