Light dependence of SOI MOSFET with nonuniform doping profile

Author

Abraham, George K. ; Pal, B.B. ; Khan, R.U.

Author_Institution

Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India

Volume

47

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1469

Lastpage

1471

Abstract

The light dependence of a fully depleted short channel silicon-on-insulator (SOI) MOSFET is investigated. As the photon flux density increases, there is a lowering in the surface potential barrier called the photon induced barrier lowering (PIBL). The threshold voltage shows a logarithmic reduction with the increase in the incident flux density. The drain source current and the transconductance significantly increase under the incident optical flux density. The device will be useful for high speed application in optical systems

Keywords

MOSFET; doping profiles; photodetectors; silicon-on-insulator; surface potential; SOI MOSFET; Si; drain source current; fully depleted short channel MOSFET; high speed application; light dependence; nonuniform doping profile; optical systems; photon flux density; photon induced barrier lowering; surface potential barrier lowering; threshold voltage; transconductance; Doping profiles; High speed optical techniques; Lighting; MOSFET circuits; Optical devices; Optical films; Optical sensors; Photodetectors; Silicon on insulator technology; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.848294

Filename

848294