Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on Sapphire (0001)

Author

Bag, Ankush ; Mukhopadhyay, Partha ; Ghosh, Saptarsi ; Kumar, Rahul ; Dinara, Syed Mukulika ; Kabi, Sanjib ; Chakraborty, Apurba ; Biswas, Dhrubes

Author_Institution

Adv. Technol. Dev. Centre, Indian Inst. of Technol., Kharagpur, Kharagpur, India

fYear

2014

fDate

Feb. 28 2014-March 2 2014

Firstpage

393

Lastpage

395

Abstract

Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; gallium compounds; high electron mobility transistors; phonons; two-dimensional electron gas; wide band gap semiconductors; 2DEG channel; Al₂O₃; AlGaN-GaN; AlGaN-GaN HEMT gain; AlGaN-GaN HEMT linearity; carrier mobility; channel self heating effect; drain bias; drain current; electron scattering; gate bias; longitudinal electric field effect; maximum gain; phonon generation; sapphire (0001) substrate; Aluminum gallium nitride; Gallium nitride; HEMTs; Linearity; Logic gates; MODFETs; Substrates; AlGaN/GaN Sapphire; Gain; HEMT; Linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Students' Technology Symposium (TechSym), 2014 IEEE

Conference_Location

Kharagpur

Print_ISBN

978-1-4799-2607-7

Type

conf

DOI

10.1109/TechSym.2014.6808083

Filename

6808083