• DocumentCode
    1351740
  • Title

    Fabrication of 24-MHz-Disk Resonators With Silicon Passive Integration Technology

  • Author

    Sworowski, Marc ; Neuilly, François ; Legrand, Bernard ; Summanwar, Anand ; Philippe, Pascal ; Buchaillot, Lionel

  • Author_Institution
    NXP Semicond., Innovation Center RF, Caen, France
  • Volume
    31
  • Issue
    1
  • fYear
    2010
  • Firstpage
    23
  • Lastpage
    25
  • Abstract
    A new approach for the fabrication of large contour-mode single-crystal silicon resonators has been demonstrated without the use of SOI substrates. Twenty-four-megahertz disk resonators have been built thanks to industrial facilities dedicated to the integration of passive components on silicon and exhibit a good compromise between the quality factor higher than 50 000 and the motional resistance of a few kiloohms.
  • Keywords
    micromechanical resonators; silicon-on-insulator; SOI; disk resonators; fabrication; frequency 24 MHz; silicon passive integration technology; single-crystal silicon resonators; Bulk micromachining; microelectromechanical systems (MEMS); microresonator; single-crystal silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2034542
  • Filename
    5350752
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1351740