Environmental, Optical, and Electrical Stability Study of Solution-Processed Zinc–Tin–Oxide Thin-Film Transistors

Author

Nayak, Pradipta K. ; Pinto, Joana V. ; Gonçalves, Gonçalo ; Martins, Rodrigo ; Fortunato, Elvira

Author_Institution

Dept. de Cienc. dos Mater., Univ. Nova de Lisboa, Caparica, Portugal

Volume

7

Issue

12

fYear

2011

Firstpage

640

Lastpage

643

Abstract

In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc-tin-oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value.

Keywords

sol-gel processing; spin coating; thin film transistors; tin compounds; zinc compounds; ZnSnO₃; amorphous zinc-tin-oxide; electrical stability; environmental stability; gate bias stress stability; optical stability; sol-gel spin-coating method; solution-processed zinc-tin-oxide thin-film transistors; Amorphous magnetic materials; Logic gates; Thin film transistors; Threshold voltage; Amorphous metal oxide; sol gel; stability; thin-film transistors (TFTs); zinc–tin–oxide (ZTO);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2011.2160151

Filename

6048002