Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers

Author

Borri, P. ; Langbein, W. ; Hvam, J.M. ; Heinrichsdorff, F. ; Mao, M.-H. ; Bimberg, D.

Author_Institution

Res. Center COM, Tech. Univ. Denmark, Lyngby, Denmark

Volume

12

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

594

Lastpage

596

Abstract

The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-dot (QD) optical amplifier are measured at room temperature using differential transmission with femtosecond time resolution. Both absorption and gain regions are investigated. While the absorption bleaching recovery occurs on a picosecond time scale, the gain compression recovers with /spl sim/100-fs time constant, making devices based on such dots promising for high-speed optical communications.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical transmitters; quantum well lasers; semiconductor quantum dots; 100 fs; InAs-InGaAs; InAs-InGaAs quantum-dot amplifiers; absorption bleaching recovery; absorption regions; differential transmission; electrically pumped InAs-InGaAs quantum-dot optical amplifier; femtosecond time resolution; fs time constant; gain compression; gain regions; high-speed optical communications; picosecond time scale; refractive index; room temperature; ultrafast dynamics; ultrafast gain dynamics; Absorption; High speed optical techniques; Optical amplifiers; Optical pumping; Optical refraction; Quantum dots; Refractive index; Stimulated emission; Temperature measurement; Ultrafast optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.849054

Filename

849054