DocumentCode
1353369
Title
GaAs MESFET differential pass-transistor logic
Author
Pasternak, John H. ; Salama, C. Andre T
Author_Institution
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume
26
Issue
9
fYear
1991
fDate
9/1/1991 12:00:00 AM
Firstpage
1309
Lastpage
1316
Abstract
Two GaAs MESFET implementations of differential pass-transistor logic (DPTL) are presented. The DPTL logic technique combines the area efficiencies and high operation speeds of ratioless pass-transistor circuits with the additional features of noise immunity and low power dissipation. Circuit structures are presented for both depletion (D)-mode and enhancement/depletion (E/D)-mode MESFET technologies, and are compared with buffered FET logic (BFL) and direct-coupled FET logic (DCFL), respectively. Experimental results are provided to verify the functionality and the performance features of both DPTL forms
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated logic circuits; DPTL logic technique; GaAs; MESFET; depletion mode; differential pass-transistor logic; enhancement/depletion mode; low power dissipation; noise immunity; CMOS technology; Dynamic range; FETs; Gallium arsenide; Logic circuits; Logic devices; Logic functions; Logic gates; MESFET circuits; MOS devices;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.84949
Filename
84949
Link To Document