• DocumentCode
    1353369
  • Title

    GaAs MESFET differential pass-transistor logic

  • Author

    Pasternak, John H. ; Salama, C. Andre T

  • Author_Institution
    Dept. of Electr. Eng., Toronto Univ., Ont., Canada
  • Volume
    26
  • Issue
    9
  • fYear
    1991
  • fDate
    9/1/1991 12:00:00 AM
  • Firstpage
    1309
  • Lastpage
    1316
  • Abstract
    Two GaAs MESFET implementations of differential pass-transistor logic (DPTL) are presented. The DPTL logic technique combines the area efficiencies and high operation speeds of ratioless pass-transistor circuits with the additional features of noise immunity and low power dissipation. Circuit structures are presented for both depletion (D)-mode and enhancement/depletion (E/D)-mode MESFET technologies, and are compared with buffered FET logic (BFL) and direct-coupled FET logic (DCFL), respectively. Experimental results are provided to verify the functionality and the performance features of both DPTL forms
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated logic circuits; DPTL logic technique; GaAs; MESFET; depletion mode; differential pass-transistor logic; enhancement/depletion mode; low power dissipation; noise immunity; CMOS technology; Dynamic range; FETs; Gallium arsenide; Logic circuits; Logic devices; Logic functions; Logic gates; MESFET circuits; MOS devices;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.84949
  • Filename
    84949