GaAs low-high doped MESFET MMIC power amplifier for CDMA/AMPS dual-mode cellular telephone

Author

Roh, T.M. ; Suh, Y. ; Kim, B. ; Park, W. ; Lee, J.B. ; Kim, Y.-S. ; Lee, G.Y.

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

Volume

32

Issue

20

fYear

1996

fDate

9/26/1996 12:00:00 AM

Firstpage

1928

Lastpage

1929

Abstract

An MMIC power amplifier using low-high doped GaAs MESFETs (LH-MESFETs) has been developed for a CDMA/AMPS dual mode cellular telephone. It is fully integrated on one chip (2.5×2.9 mm²) including all matching circuits. For CDMA operation at frequency of 836.5 MHz, an efficiency of 25%, adjacent channel leakage power of -29 dBc at 885 kHz, and -48 dBc at 1980 kHz were obtained with an output power of 27.25 dBm and V_dd=4.7 V. In AMPS operation, 30.5 dBm output power was obtained with 27.5 dB gain and 47% efficiency. The experimental results show that the gate periphery of LH-MESFETs and size of MMIC are much smaller than in previously reported similar amplifiers using conventional MESFET technology. This MMIC power amplifier is suitable for dual mode cellular applications

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; code division multiple access; cordless telephone systems; field effect MMIC; gallium arsenide; 1980 kHz; 25 percent; 27.5 dB; 4.7 V; 47 percent; 824 to 849 MHz; 885 kHz; AMPS operation; CDMA operation; GaAs; GaAs MMIC power amplifier; dual-mode cellular telephone; low-high doped MESFET; matching circuits;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19961280

Filename

535221