Proton Irradiation Effects on Resistive Random Access Memory With ZrO $_{\rm x}$ /HfO $_{\rm x}$ Sta

In this study, we investigated proton irradiation effects on resistive random access memory (ReRAM) comprising ZrO_x/HfO_x stacks. After irradiation, changes of current were observed in the initial state (IS). From the electrical conduction mechanism in the IS, we have concluded that the different initial conditions of the active layer lead to different radiation effects. The radiation-induced leakage paths have been concluded as main origin of the increased leakage current, whereas radiation-induced charge trapping is dominant fact of the decreased leakage current in the IS. From the results of noise analysis in the low resistance state (LRS) and high resistance state (HRS), we observed that the radiation effects became negligible because of the formed local conducting path during forming process.