DocumentCode
1354412
Title
Influence of trench-oxide depth on junction-size dependence of α-particle-induced charge collection [DRAMs]
Author
Sun, Wookyung ; Park, Ji-Sun ; Shin, Hyurigsoon
Author_Institution
Dept. of Electron. Eng., Ewha W. Univ., Seoul, South Korea
Volume
36
Issue
13
fYear
2000
fDate
6/22/2000 12:00:00 AM
Firstpage
1152
Lastpage
1153
Abstract
The effect of trench-oxide depth on the α-particle-induced charge collection is analysed for various junction sizes. Simulation results indicate that the influence of trench-oxide depth on the charge collection substantially increases as the junction size is reduced. Confinement of the charge by the trench oxide in the reduced junction size is identified as a cause of this effect
Keywords
DRAM chips; α-particle-induced charge collection; DRAMs; junction-size dependence; memory cell size; trench-oxide depth;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000802
Filename
850476
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