DocumentCode
1354675
Title
Polycrystalline cubic silicon carbide photoconductive switch
Author
Sheng, Senpeng ; Spencer, Michael G. ; Tang, Xiao ; Zhou, Peizhen ; Harris, Gary L.
Author_Institution
Sch. of Eng., Howard Univ., Washington, DC, USA
Volume
18
Issue
8
fYear
1997
Firstpage
372
Lastpage
374
Abstract
The first cubic silicon carbide (3C-SiC) photoconductive switches were fabricated from polycrystalline 3C-SiC. The switches had a dark resistivity of 10/sup 6/ /spl Omega//cm. A breakdown field of 250 kV/cm and a peak photocurrent density of 10 kA/cm/sup 2/ through the switch were obtained. The ratio of off-resistance to on-resistance of the switch reached up to 10/sup 5/. The photocurrent had a pulse width as narrow as 15 ns. The trigger gain of the switch was 4.7.
Keywords
photoconducting switches; semiconductor materials; silicon compounds; 3C-SiC; SiC; breakdown field; dark resistivity; photoconductive switch; photocurrent density; polycrystalline cubic silicon carbide; pulse width; trigger gain; Circuit testing; Conductivity; Electric breakdown; Gallium arsenide; Optical pulses; Photoconductivity; Power semiconductor switches; Pulse measurements; Silicon carbide; Space vector pulse width modulation;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.605443
Filename
605443
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