Evaluation of ohmic contacts to p-type 6H-SiC created by C and Al coimplantation

Author

Zhao, Jian H. ; Tone, Kiyoshi ; Weiner, Stephen R. ; Caleca, Maria A. ; Du, Honghua ; Withrow, Stephen P.

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

Volume

18

Issue

8

fYear

1997

Firstpage

375

Lastpage

377

Abstract

A comparative study of specific contact resistance and sheet resistivity of p-type 6H-SiC created by Al implantation only and by C and Al coimplantation into n/sup -/-6H-SiC epilayer grown on n/sup +/-6H-SiC has been performed to address the challenging issue of ohmic contacts to the anode of SiC thyristors and other thyristor-based advanced devices. Direct experimental evidence has been obtained which shows the obvious advantage of C and Al coimplantation in terms of contact resistance and sheet resistivity. Under our experimental conditions, it is found that the specific contact resistance can be reduced by three orders of magnitude and the sheet resistivity can be improved by a factor of 6 when C and Al are coimplanted into 6H-SiC.

Keywords

aluminium; carbon; contact resistance; ion implantation; ohmic contacts; silicon compounds; thyristors; wide band gap semiconductors; SiC:Al; coimplantation; contact resistance; ohmic contact; p-type 6H-SiC; sheet resistivity; thyristor; Annealing; Contact resistance; Doping; Fabrication; Laboratories; Materials science and technology; Ohmic contacts; Performance evaluation; Silicon carbide; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.605444

Filename

605444