DocumentCode
1354726
Title
Electromigration-induced failure of GaN multi-quantum well light emitting diode
Author
Kim, Hyunsoo ; Yang, Hyundoek ; Huh, Chul ; Kim, Sang-Woo ; Park, Seong-Ju ; Hwang, Hyunsang
Author_Institution
Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea
Volume
36
Issue
10
fYear
2000
fDate
5/11/2000 12:00:00 AM
Firstpage
908
Lastpage
910
Abstract
The reliability characteristics of a multi-quantum well (MQW) GaN-InGaN light emitting diode (LED) under various stress current densities have been investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation t f=C/I*
Keywords
III-V semiconductors; current density; electromigration; failure analysis; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device reliability; semiconductor quantum wells; wide band gap semiconductors; GaN MQW LED; GaN-InGaN; GaN/InGaN LED; LED device lifetime; MQW light emitting diode; contact electromigration failure model; electromigration-induced failure; multi-quantum well LED; reliability characteristics; stress current densities;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000657
Filename
850523
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