A two-dimensional simulation of organic transistors

Author

Alam, Muhammad A. ; Dodabalapur, Ananth ; Pinto, Mark R.

Author_Institution

Lucent Technol., Bell Labs., Murray Hill, NJ, USA

Volume

44

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1332

Lastpage

1337

Abstract

In this paper, we analyze the operation of organic thin-film transistors (TFT´s) using two-dimensional (2-B) numerical simulation to: (1) validate the use of simple MOSFET theory to describe the above-threshold behavior; (2) clarify the subthreshold characteristics, and short-channel effects; and (3) illustrate the operation of organic bilayer devices. Our analysis clarifies a number of issues that can help in device design. We also point out differences between the material parameters used in Si-MOSFET and organic FET simulation, and discuss the circumstances under which a semiconductor device simulator can be used for the simulation of organic transistors

Keywords

organic compounds; organic semiconductors; semiconductor device models; thin film transistors; FET; MOSFET theory; bilayer device; organic thin-film transistor; semiconductor device; short-channel effect; subthreshold characteristics; two-dimensional numerical simulation; Analytical models; Circuit simulation; MOSFETs; Numerical simulation; Organic materials; Semiconductor devices; Semiconductor materials; Substrates; Thin film transistors; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.605477

Filename

605477