Gain peak-cavity mode alignment optimisation in buried tunnel junction mid-infrared GaSb vertical cavity surface emitting lasers using hydrostatic pressure

Author

Ikyo, A.B. ; Marko, I.P. ; Adams, A.R. ; Sweeney, S.J. ; Bachmann, A. ; Kashani-Shirazi, K. ; Amann, M.-C.

Author_Institution

Adv. Technol. Inst., Univ. of Surrey, Guildford, UK

Volume

3

Issue

6

fYear

2009

Firstpage

305

Lastpage

309

Abstract

High-pressure techniques are used to investigate and optimise the design of GaInAsSb/AlGaAsSb vertical cavity surface emitting lasers (VCSELs) emitting at 2.4 ??m. From measurements on edge emitting lasers it is found that non-radiative Auger recombination accounts for up to 85% of the threshold current at room temperature (RT) and is responsible for their strong temperature sensitivity. The effect of Auger recombination in VCSELs may be mitigated through judicious design of the gain peak-cavity mode (CM) alignment which may be investigated using high pressure. Results show that temperature insensitivity over the range -10 to +30??C may be obtained around RT if the gain peak is offset by approximately 10 meV higher in energy from the VCSEL CM.

Keywords

Auger effect; III-V semiconductors; aluminium compounds; arsenic compounds; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; optimisation; surface emitting lasers; Auger recombination; GaInAsSb-AlGaAsSb; buried tunnel junction; edge emitting lasers; gain peak-cavity mode alignment; high-pressure techniques; hydrostatic pressure; optimisation; temperature 293 K to 298 K; vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Optoelectronics, IET

Publisher

iet

ISSN

1751-8768

Type

jour

DOI

10.1049/iet-opt.2009.0045

Filename

5353235