Electrical measurement of electron and hole mobilities as a function of injection level in silicon

Author

Bellone, Salvatore ; Persiano, Giovanni Vito ; Strollo, Antonio G M

Author_Institution

Dept. of Inf. & Electr. Eng., Salerno Univ., Italy

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1459

Lastpage

1465

Abstract

The first experimental method to separately measure the hole and the electron mobilities as a function of the injection level is presented. The carrier mobilities are extracted from impulsive measurements of the resistance associated with a n⁺-ν-n ⁺ (p⁺-π-p⁺) structure, where the conductivity of the intermediate layer is controlled by the injection of an incorporated p-n junction diode. Two-dimensional numerical simulation is used to assess the accuracy of the proposed measurement technique. Experimental results obtained at room temperature on both n-type and p-type materials are presented and compared to existing analytical mobility models

Keywords

electric variables measurement; electron mobility; elemental semiconductors; hole mobility; silicon; Si; carrier mobilities; electrical measurement; electron mobility; hole mobility; impulsive measurements; injection level; measurement technique; n-type material; n⁺-ν-n⁺ structure; p-n junction diode; p-type material; p⁺-π-p⁺ structure; resistance; two-dimensional numerical simulation; Charge carrier processes; Conductivity measurement; Diodes; Electric resistance; Electric variables measurement; Electrical resistance measurement; Electron mobility; Measurement techniques; Numerical simulation; P-n junctions;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535333

Filename

535333