Carrier correlation effects in a quantum-well semiconductor laser medium

Author

Chow, W.W. ; Knorr, A. ; Hughes, S. ; Girndt, A. ; Koch, S.W.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

136

Lastpage

141

Abstract

This paper describes the results of a microscopic treatment of carrier-carrier scattering effects in the optical gain and refractive index spectra of a quantum-well semiconductor laser structure. The approach uses the Semiconductor Maxwell Bloch equations to describe the interaction between the carriers and the laser field, in the presence of many-body Coulomb interactions. Coulomb correlation effects are treated at the level of quantum kinetic theory in the Markovian limit. This approach shows the presence of nondiagonal Coulomb correlation contributions, in addition to the familiar diagonal contributions giving rise to polarization dephasing

Keywords

amplification; collision processes; electron correlations; electron-phonon interactions; laser theory; many-body problems; potential scattering; quantum well lasers; refractive index; semiconductor device models; Coulomb correlation effects; Markovian limit; carrier correlation effects; carrier laser field interaction; carrier-carrier scattering effects; many-body Coulomb interactions; microscopic treatment; nondiagonal Coulomb correlation contributions; optical gain spectra; polarization dephasing; quantum kinetic theory; quantum-well semiconductor laser medium; refractive index spectra; semiconductor Maxwell Bloch equations; Laser theory; Maxwell equations; Optical microscopy; Optical refraction; Optical scattering; Optical variables control; Particle scattering; Quantum well lasers; Refractive index; Semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605645

Filename

605645