Modification of modal gain in InGaAs-GaAs quantum-well lasers due to barrier-state carriers

Author

Finzi, D. ; Mikhaelashvili, V. ; Tessler, N. ; Eisenstein, G.

Author_Institution

Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

142

Lastpage

147

Abstract

This paper describes the effects of barrier-state carriers on the modal gain of InGaAs-GaAs quantum-well (QW) lasers emitting at 980 nm. Experimental studies and numerical simulations are used to examine several drive configurations, each having a unique effect on the laser response. These include compound drive current shapes, optical excitations and fast electrical drives with rise times shorter than 100 ps. We demonstrate that a large barrier-state carrier density affects the index of refraction sufficiently so as to cause a reduction in the confinement factor and modal gain which is large enough to turn the laser off

Keywords

III-V semiconductors; carrier density; gallium arsenide; indium compounds; laser modes; laser theory; quantum well lasers; refractive index; semiconductor device models; 100 ps; 980 nm; InGaAs-GaAs; InGaAs-GaAs quantum-well lasers; barrier-state carriers; compound drive current shapes; confinement factor; drive configurations; fast electrical drives; index of refraction; large barrier-state carrier density; laser response; modal gain; numerical simulations; optical excitations; rise times; Carrier confinement; Electron optics; Heating; Optical bistability; Optical modulation; Optical pulses; Optical refraction; Power lasers; Pulse measurements; Quantum well lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605646

Filename

605646