Coulomb enhancement in InGaAs-GaAs quantum-well lasers

Author

Hsu, Chia-Fu ; Zory, Peter S. ; Wu, Chih-Hung ; Emanuel, Mark A.

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA

Volume

3

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

158

Lastpage

165

Abstract

It is shown that Coulomb enhancement (CE) has a significant influence on the spectral characteristics of optical gain and spontaneous emission in strained InGaAs quantum wells. CE-modified gain spectra are utilized to make an accurate prediction of the dependence of lasing wavelength on cavity length, Threshold-current predictions using the CE-modified gain-current relation show improved agreement with experiment

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; laser theory; many-body problems; quantum well lasers; semiconductor device models; spontaneous emission; Coulomb enhancement; InGaAs-GaAs; InGaAs-GaAs quantum-well lasers; cavity length; gain-current relation; lasing wavelength; many-body effects; optical gain; spectral characteristics; spontaneous emission; strained InGaAs quantum wells; threshold-current predictions; Dielectric materials; Indium gallium arsenide; Laser modes; Optical materials; Optical scattering; Photonic band gap; Quantum well lasers; Spontaneous emission; Stimulated emission; Threshold current;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.605649

Filename

605649