Mechanical stress analysis of an LDD MOSFET structure

Author

Ferreira, Paul ; Senez, Vincent ; Baccus, Burno

Author_Institution

Dept. ISEN, IEMN, Villeneuve d´´Ascq, France

Volume

43

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

1525

Lastpage

1532

Abstract

This paper presents a mechanical stress study of the LDD MOSFET structure. The stresses are successively evaluated through the forming steps and topological modifications are proposed in order to minimize the residual substrate stress. The analysis is based on a two dimensional finite element method. It includes the cumulative effects from the thermal oxidation, the thermal cycles and the intrinsic stresses, allowing the estimation of the evolution of the stress field during the manufacturing. A nonlinear viscoelastic approach is used to model the nitride, thermal and deposited oxides rheological behaviors. For those oxides, a complete calibration of the mechanical properties is proposed

Keywords

MOSFET; calibration; finite element analysis; mechanical properties; oxidation; rheology; semiconductor device models; stress analysis; thermal stresses; 2D finite element method; LDD MOSFET structure; deposited oxides; intrinsic stresses; mechanical properties; mechanical stress analysis; nonlinear viscoelastic approach; residual substrate stress; rheological behavior; thermal cycles; thermal oxidation; thermal oxides; topological modifications; two dimensional FEM; Calibration; Elasticity; Finite element methods; MOSFET circuits; Manufacturing; Oxidation; Residual stresses; Rheology; Thermal stresses; Viscosity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.535345

Filename

535345