Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel Applications

Author

Lin, Horng-Chih ; Liu, Ta-Wei ; Hsu, Hsing-Hui ; Lin, Chuan-Ding ; Huang, Tiao-Yuan

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

9

Issue

3

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

386

Lastpage

391

Abstract

A new method is proposed and demonstrated to fabricate planar thin-film transistors and trigated nanowire (NW) devices simultaneously on the same panel. By using an oxide-nitride-oxide stack as the gate dielectric, the NW devices could also serve as nonvolatile Si-oxide-nitride-oxide-Si (SONOS) memory devices. Our results indicate that the combination of trigate and NW channels help to improve the device performance in terms of steppers subthreshold swing and reduced threshold voltage. Improvement in programming and erasing efficiency of the nonvolatile SONOS memory devices is also demonstrated with the trigated NW structure.

Keywords

elemental semiconductors; flat panel displays; nanowires; random-access storage; semiconductor storage; semiconductor-insulator-semiconductor devices; silicon; silicon compounds; thin film transistors; Si-JkO-JkN-JkO-Si; Si₃N₄-Si; gate dielectric; nonvolatile SONOS memory devices; nonvolatile Si-oxide-nitride-oxide-Si memory devices; oxide-nitride-oxide stack; planar thin-film transistors; trigated poly-Si nanowire SONOS devices; Field-effect transistor; Si–oxide–nitride–oxide–Si (SONOS); multiple gate; nanowire (NW); poly-Si;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2009.2029573

Filename

5223592