Patterning of Carbon Nanotubes by Material Assisted Laser Ablation Process

Author

Chae, Junghun ; Jain, Kanti

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA

Volume

9

Issue

3

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

381

Lastpage

385

Abstract

Carbon nanotubes were patterned by a nonphotolithographic, low energy, large area, and high-throughput laser patterning process [material-assisted laser ablation (MALA)]. In this process, a residue layer was observed after the patterning process, requiring an additional cleaning process for the fabrication of electronic devices. In this paper, we investigated the mechanism of the residue layer formation, and optimized the MALA process so that no residue layer is formed after the patterning of carbon nanotubes. We demonstrated patterning of carbon nanotubes on 100 mm diameter silicon wafers, and the patterns of carbon nanotubes were sufficiently clean and sharp to be applicable in high-volume fabrication of electronic devices.

Keywords

carbon nanotubes; elemental semiconductors; laser ablation; nanofabrication; nanopatterning; silicon; C; Si; carbon nanotubes; cleaning process; electronic devices; laser patterning process; material assisted laser ablation; nanofabrication; nanopatterning; nonphotolithography; residue layer; silicon wafers; size 100 mm; Carbon nanotube; excimer laser; material assisted laser ablation (MALA); photoablation;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2009.2029696

Filename

5223612