• DocumentCode
    1357261
  • Title

    A Single-Trim CMOS Bandgap Reference With a 3\\sigma Inaccuracy of \\pm 0.15% From

  • Author

    Ge, Guang ; Zhang, Cheng ; Hoogzaad, Gian ; Makinwa, Kofi A A

  • Volume
    46
  • Issue
    11
  • fYear
    2011
  • Firstpage
    2693
  • Lastpage
    2701
  • Abstract
    A CMOS bandgap reference with an inaccuracy of ±0.15% (3 σ) from -40°C to 125°C is presented. In contrast to prior art, it requires only a single trim to achieve this level of precision. A detailed analysis of the various error sources is provided, and techniques to reduce them are discussed. The prototype bandgap reference draws 55 μA from a 1.8 V supply, and occupies 0.12 mm2 in a 0.16 μm CMOS process. Experimental results from two runs show that, with the use of chopping and higher-order curvature correction to remove non-PTAT errors, the residual error of a bandgap reference is mainly PTAT, and can be removed by a single room temperature trim.
  • Keywords
    CMOS integrated circuits; cutting; energy gap; higher-order curvature correction; nonPTAT error; prototype bandgap reference; residual error; room temperature trim; single-trim CMOS bandgap reference; temperature -40 degC to 125 degC; temperature 293 K to 298 K; CMOS integrated circuits; CMOS technology; Photonic band gap; Resistance; Resistors; Temperature dependence; Temperature distribution; CMOS bandgap reference; Chopping; curvature correction; room temperature trim;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2011.2165235
  • Filename
    6056712