DocumentCode
1357266
Title
Analytic Model for Undoped Symmetric Double-Gate MOSFETs With Small Gate-Oxide-Thickness Asymmetry
Author
Chang, Sheng ; Wang, Gaofeng ; Huang, Qijun ; Wang, Hao
Author_Institution
Inst. of Microelectron. & Inf. Technol., Wuhan Univ., Wuhan, China
Volume
56
Issue
10
fYear
2009
Firstpage
2297
Lastpage
2301
Abstract
In this paper, an analytic model for undoped symmetric double-gate MOSFETs with small gate-oxide-thickness asymmetry is presented by virtue of a perturbation approach. Various effects on the MOSFET performance caused by small asymmetric departure from the nominal gate oxide thickness due to process variations and uncertainties are studied. This analytic solution can be used in compact models for IC designs.
Keywords
MOSFET; IC designs; nominal gate oxide thickness; perturbation approach; small gate-oxide-thickness asymmetry; undoped symmetric double-gate MOSFET; Analog integrated circuits; Circuit synthesis; Digital integrated circuits; Information technology; Integrated circuit modeling; MOSFETs; Microelectronics; Nanoscale devices; Potential well; Uncertainty; Analytic solution; double-gate (DG) MOSFET; gate-oxide-thickness asymmetry; surface potential;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2028379
Filename
5223638
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