• DocumentCode
    1358500
  • Title

    Experimental Demonstration of Novel High-Voltage Epilayer RESURF GaN MOSFET

  • Author

    Huang, Weixiao ; Chow, T. Paul ; Niiyama, Yuki ; Nomura, Takehiko ; Yoshida, Seikoh

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    30
  • Issue
    10
  • fYear
    2009
  • Firstpage
    1018
  • Lastpage
    1020
  • Abstract
    We report on the experimental demonstration of a novel n-channel GaN epilayer RESURF GaN MOSFET with good tradeoff between breakdown voltage and specific on-resistance for the first time. Device with 4-mum channel length and 16-mum RESURF length has breakdown voltage up to 730 V with specific on-resistance 34 mOmegamiddotcm2 (VG - VT = 20 V), best reported to date.
  • Keywords
    III-V semiconductors; MOSFET; gallium compounds; semiconductor device breakdown; GaN; MOSFET; breakdown voltage; high-voltage n-channel epilayer RESURF; size 16 mum; size 4 mum; specific on-resistance; voltage 730 V; Epilayer RESURF; MOSFET; gallium nitride; high voltage; n-channel;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2027820
  • Filename
    5226564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1358500