• DocumentCode
    1359234
  • Title

    A 10 MS/s 11-bit 0.19 mm ^{2} Algorithmic ADC With Improved Clocking Scheme

  • Author

    Kim, Min Gyu ; Hanumolu, Pavan Kumar ; Moon, Un-Ku

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA
  • Volume
    44
  • Issue
    9
  • fYear
    2009
  • Firstpage
    2348
  • Lastpage
    2355
  • Abstract
    A 10 MS/s 11-bit algorithmic ADC with an active area of 0.19 mm2 is presented. Using an improved clocking scheme, this design overcomes the speed limit of algorithmic ADCs. The proposed ADC employs amplifier sharing, DC offset cancellation, and input memory effect suppression, resulting in reduced area and power, and high linearity. The ADC implemented in a 0.13 mum thick gate-oxide CMOS process achieves 69 dB SFDR, 58 dB SNR, and 56 dB SNDR, while consuming 3.5 mA from a 3 V supply.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; clocks; DC offset cancellation; algorithmic ADC; amplifier sharing; current 3.5 mA; improved clocking scheme; input memory effect suppression; size 0.13 mum; thick gate-oxide CMOS process; voltage 3 V; Algorithm design and analysis; Bandwidth; CMOS technology; Capacitors; Clocks; Differential amplifiers; Frequency; Hardware; Multiplexing; Voltage; Algorithmic ADC; amp sharing; clocking scheme; delay-locked loop; memory effect; system-on-chip;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2009.2023158
  • Filename
    5226753