Experimental evaluation of on-chip measurement of charge transfer by X-rays

Author

Lal, K. ; Hartnagel, H.L. ; Goswami, Nilanjan ; Thoma, P

Author_Institution

Nat. Phys. Lab., New Delhi, India

Volume

36

Issue

14

fYear

2000

fDate

7/6/2000 12:00:00 AM

Firstpage

1204

Lastpage

1205

Abstract

A new on-chip testing technique is proposed and experimentally evaluated. It is based on the diffraction of highly monochromatic and collimated X-rays of dimensions of ~1 μm from single crystal semiconductors. Small differences in electronic distribution in FETs, including 2 DEG HEMTs, CCD, or many other charge transfer concepts of monolithic integrated circuits can yield measurable X-ray intensity changes. A calculation of the sensitivity shows that charges in resonant quantum structures can also produce detectable scattering variations if there are around 500 electrons in a well of dimensions 500×500 nm ². The new technique is therefore relevant for future highly packaged ICs with near-sub-micrometre dimensions

Keywords

HEMT integrated circuits; VLSI; X-ray applications; X-ray diffraction; charge-coupled device circuits; integrated circuit measurement; 1 micron; CCD; HEMTs; X-ray diffraction; charge transfer; collimated X-rays; electronic distribution; highly packaged ICs; monochromatic X-rays; near-sub-micrometre dimensions; on-chip measurement; resonant quantum structures; scattering variations;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000892

Filename

852242