DocumentCode
1359610
Title
GaInAsN/GaAs laser diodes operating at 1.52 μm
Author
Fischer, M. ; Reinhardt, M. ; Forchel, A.
Author_Institution
Inst. fur Tech. Phys., Wurzburg Univ., Germany
Volume
36
Issue
14
fYear
2000
fDate
7/6/2000 12:00:00 AM
Firstpage
1208
Lastpage
1209
Abstract
GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 μm range based on GaAs
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 1.52 mum; 1517 nm; 298 K; GaAs; GaInAsN-GaAs; GaInAsN/GaAs laser diodes; double quantum well lasers; ridge waveguide laser diode; room-temperature laser emission; room-temperature pulsed operation; solid source molecular beam epitaxy; wavelength;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000870
Filename
852245
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