A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET´s with sub-2 nm gate oxides

Author

Yang, Nian ; Henson, W. Kirklen ; Wortman, Jimmie J.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

47

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1636

Lastpage

1644

Abstract

This work examines different components of leakage current in scaled n-MOSFET´s with ultrathin gate oxides (1.4-2.0 nm). Both gate direct tunneling and drain leakage currents are studied by theoretical modeling and experiments, and their effects on the drain current are investigated and compared. It concludes that the source and drain extension to the gate overlap regions have strong effects on device performance in terms of gate tunneling and off-state drain currents

Keywords

MOSFET; dielectric thin films; leakage currents; semiconductor device models; tunnelling; 1.4 to 2 nm; GIDL; NMOSFET; drain current; drain extension; drain leakage currents; gate direct tunneling currents; gate overlap regions; offstate drain currents; scaled n-MOSFET; source extension; theoretical modeling; ultrathin gate oxides; Energy consumption; Leakage current; MOS capacitors; MOS devices; MOSFET circuits; Quantum mechanics; Rapid thermal processing; Silicon compounds; Substrates; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.853042

Filename

853042