DocumentCode
136159
Title
Millisecond annealing for advanced device fabrications
Author
Yun Wang ; Shaoyin Chen ; Xiaoru Wang ; Shen, Meng
Author_Institution
Ultratech Inc., San Jose, CA, USA
fYear
2014
fDate
June 26 2014-July 4 2014
Firstpage
1
Lastpage
6
Abstract
Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface engineering are a few examples. In this paper, we review various applications of millisecond annealing for advanced logic device fabrications. Extendibility to new materials, opportunities and challenges for DRAM applications are also discussed.
Keywords
CMOS integrated circuits; DRAM chips; laser beam annealing; logic devices; CMOS technology; DRAM; contact interface engineering; dopant activation; gate stack property modification; junction formation; laser spike annealing; logic device fabrications; millisecond annealing; strain enhancement; Annealing; Junctions; Laser beams; Logic gates; Silicides; Silicon; deactivation; dopant activation; laser spike annealing (LSA); millisecond annealing; parasitic resistance; reactivation;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology (IIT), 2014 20th International Conference on
Conference_Location
Portland, OR
Type
conf
DOI
10.1109/IIT.2014.6940020
Filename
6940020
Link To Document