30-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTs

Author

Chang, Chia-Ta ; Hsu, Heng-Tung ; Chang, Edward Yi ; Kuo, Chien-I ; Huang, Jui-Chien ; Lu, Chung-Yu ; Miyamoto, Yasuyuki

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

31

Issue

2

fYear

2010

Firstpage

105

Lastpage

107

Abstract

We demonstrate a 100-nm-gate-recessed n-GaN/AlGaN/GaN high-electron mobility transistor (HEMT) with low-noise properties at 30 GHz. The recessed GaN HEMT exhibits a low ohmic-contact resistance of 0.28 ????mm and a low gate leakage current of 0.9 ??A/mm when biased at V_GS = -3 V and V_DS = 10 V. At the same bias point, a minimum noise figure of 1.6 dB at 30 GHz and an associated gain of 5 dB were achieved. To the best of our knowledge, this is the best noise performance reported at 30 GHz for gate-recessed AlGaN/GaN HEMTs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; leakage currents; microwave field effect transistors; semiconductor device noise; wide band gap semiconductors; GaN-AlGaN-GaN; frequency 30 GHz; gain 5 dB; gate-recessed HEMT; high-electron mobility transistor; low gate leakage current; low-noise performance; low-noise properties; noise figure 1.6 dB; ohmic-contact resistance; size 100 nm; voltage -3 V; voltage 10 V; AlGaN/GaN; high-electron mobility transistor (HEMT); noise figure; recessed gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2037167

Filename

5357371