• DocumentCode
    1362081
  • Title

    Extension of the ADC Charge-Collection Model to Include Multiple Junctions

  • Author

    Edmonds, Larry D.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    3333
  • Lastpage
    3342
  • Abstract
    The ADC charge-collection model was derived for silicon diodes containing a single reverse-biased p-n junction. The present paper extends the model to include two junctions, and the goal is to estimate how collected charge is shared between them. The extended model identifies the conditions needed to produce either of three possibilities. One possibility is that charge is shared by both junctions, and the total collected charge from the two junctions is less than the total amount of liberated charge. A second possibility is that collected charge is shared by both junctions, and the total collected charge from the two junctions is equal to the total amount of liberated charge. The third possibility is that all liberated charge is collected by one junction, and no charge is collected by the other. Examples show excellent agreement with TCAD simulations.
  • Keywords
    diffusion; p-n junctions; semiconductor device models; semiconductor diodes; silicon compounds; ADC charge-collection model; TCAD simulations; collected charge; liberated charge; multiple junctions; silicon diodes; single reverse-biased p-n junction; Analytical models; Diffusion processes; Junctions; Substrates; ADC model; ambipolar diffusion; ambipolar diffusion with a cutoff; charge collection; drift-diffusion;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2168976
  • Filename
    6060934