DocumentCode
1362081
Title
Extension of the ADC Charge-Collection Model to Include Multiple Junctions
Author
Edmonds, Larry D.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
58
Issue
6
fYear
2011
Firstpage
3333
Lastpage
3342
Abstract
The ADC charge-collection model was derived for silicon diodes containing a single reverse-biased p-n junction. The present paper extends the model to include two junctions, and the goal is to estimate how collected charge is shared between them. The extended model identifies the conditions needed to produce either of three possibilities. One possibility is that charge is shared by both junctions, and the total collected charge from the two junctions is less than the total amount of liberated charge. A second possibility is that collected charge is shared by both junctions, and the total collected charge from the two junctions is equal to the total amount of liberated charge. The third possibility is that all liberated charge is collected by one junction, and no charge is collected by the other. Examples show excellent agreement with TCAD simulations.
Keywords
diffusion; p-n junctions; semiconductor device models; semiconductor diodes; silicon compounds; ADC charge-collection model; TCAD simulations; collected charge; liberated charge; multiple junctions; silicon diodes; single reverse-biased p-n junction; Analytical models; Diffusion processes; Junctions; Substrates; ADC model; ambipolar diffusion; ambipolar diffusion with a cutoff; charge collection; drift-diffusion;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2011.2168976
Filename
6060934
Link To Document