Comparison of microwave inductors fabricated on silicon-on-sapphire and bulk silicon

Author

Johnson, R.A. ; Chang, C.E. ; Asbeck, P.M. ; Wood, M.E. ; Garcia, G.A. ; Lagnado, I.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

6

Issue

9

fYear

1996

fDate

9/1/1996 12:00:00 AM

Firstpage

323

Lastpage

325

Abstract

Inductors are important elements of microwave circuits that frequently require high self-resonant frequencies and high quality factors. In this work, circular spiral inductors fabricated on silicon-on-sapphire (SOS) and bulk silicon are compared. Due to the low-loss dielectric substrate, SOS inductors showed both higher self-resonant frequencies and higher quality factors than those fabricated on bulk silicon. Small-signal models extracted for the inductors confirm that the degradation of the inductor characteristics in bulk silicon stems from losses in the substrate

Keywords

MMIC; Q-factor; equivalent circuits; inductors; losses; silicon; silicon-on-insulator; substrates; thin film devices; SOS inductors; SOS substrate; Si; Si-Al₂O₃; bulk Si; circular spiral inductors; high quality factors; high self-resonant frequencies; low-loss dielectric substrate; microwave circuits; microwave inductors; silicon-on-sapphire; small-signal models; substrate losses; Dielectric substrates; Electrical resistance measurement; Frequency; Inductors; Metallization; Microwave circuits; Q factor; Sea measurements; Silicon; Spirals;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.535833

Filename

535833