DocumentCode
1363456
Title
Assessment of off-state negative gate voltage requirements for IGBTs
Author
McNeill, Neville ; Sheng, Kuang ; Williams, Barry W. ; Finney, Stephen J.
Author_Institution
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
Volume
13
Issue
3
fYear
1998
fDate
5/1/1998 12:00:00 AM
Firstpage
436
Lastpage
440
Abstract
This paper addresses the need for off-state negative gate bias with insulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretical calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors
Keywords
driver circuits; electric impedance; insulated gate bipolar transistors; IGBT; IGBT gate drives; gate impedance; high-voltage high-current IGBT; insulated gate bipolar transistor devices; off-state gate bias voltage; off-state negative gate voltage requirements; reapplied dv/dt; temperature; Capacitance; Impedance; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Manufacturing; Semiconductor diodes; Tail; Temperature; Threshold voltage;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/63.668104
Filename
668104
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