• DocumentCode
    1364753
  • Title

    Polarity-Dependent Morphological Changes of Ti/TiN/W Via Under High Current Density

  • Author

    Kim, Deok-Kee ; Park, Yoondong

  • Author_Institution
    Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea
  • Volume
    31
  • Issue
    2
  • fYear
    2010
  • Firstpage
    120
  • Lastpage
    122
  • Abstract
    Electrical voltage polarity-dependent failures of Ti/TiN/W via fuses were observed and analyzed by microstructural analyses and flux calculations based on the simulated Thomson-shifted temperature profiles. In the forward program, electromigration (EM) was in the same direction as thermomigration (TM), while in the reverse program, EM was in the opposite direction from TM, which made the forward program more efficient. When designing a fuse device, various fluxes had to be taken into account.
  • Keywords
    DRAM chips; current density; electric fuses; electromigration; titanium; titanium compounds; tungsten; DRAM; Ti-TiN-W; current density; electrical voltage polarity-dependent failures; electromigration; flux calculations; forward program; fuse device; microstructural analysis; polarity-dependent morphological changes; reverse program; simulated Thomson-shifted temperature profiles; thermomigration; via fuses; Copper; electromigration (EM); thermomigration (TM); tungsten;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2036573
  • Filename
    5361366