DocumentCode
1364753
Title
Polarity-Dependent Morphological Changes of Ti/TiN/W Via Under High Current Density
Author
Kim, Deok-Kee ; Park, Yoondong
Author_Institution
Semicond. R&D Center, Samsung Electron. Co., Ltd., Yongin, South Korea
Volume
31
Issue
2
fYear
2010
Firstpage
120
Lastpage
122
Abstract
Electrical voltage polarity-dependent failures of Ti/TiN/W via fuses were observed and analyzed by microstructural analyses and flux calculations based on the simulated Thomson-shifted temperature profiles. In the forward program, electromigration (EM) was in the same direction as thermomigration (TM), while in the reverse program, EM was in the opposite direction from TM, which made the forward program more efficient. When designing a fuse device, various fluxes had to be taken into account.
Keywords
DRAM chips; current density; electric fuses; electromigration; titanium; titanium compounds; tungsten; DRAM; Ti-TiN-W; current density; electrical voltage polarity-dependent failures; electromigration; flux calculations; forward program; fuse device; microstructural analysis; polarity-dependent morphological changes; reverse program; simulated Thomson-shifted temperature profiles; thermomigration; via fuses; Copper; electromigration (EM); thermomigration (TM); tungsten;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2009.2036573
Filename
5361366
Link To Document