Effect of coplanar probe pad design on noise figures of 0.35 μm MOSFETs

Author

Su, C.Y. ; Chen, L.P. ; Chang, S.J. ; Huang, G.W. ; Ho, Y.P. ; Tseng, B.M. ; Lin, D.C. ; Lee, H.Y. ; Kuan, J.F. ; Deng, Y.M. ; Chen, C.L. ; Leu, L.Y. ; Wen, K.A. ; Chang, C.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

36

Issue

15

fYear

2000

fDate

7/20/2000 12:00:00 AM

Firstpage

1280

Lastpage

1281

Abstract

The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours

Keywords

CMOS integrated circuits; MOSFET; electric noise measurement; equivalent circuits; integrated circuit measurement; integrated circuit noise; probes; semiconductor device measurement; semiconductor device noise; 0.35 micron; MOSFET noise performance; coplanar probe pad design; deep submicron CMOS; ground-signal-ground probe pads; grounded bottom-level metal shielding; grounded shielding; noise figure characteristics; probe pad equivalent circuits; submicron MOSFETs; substrate parasitic resistance; top-level metal probe pads;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000904

Filename

856205