Design optimization and testing of a GaAs switched-capacitor filter

Author

Haigh, David G. ; Toumazou, Chris ; Harrold, Stephen J. ; Steptoe, K. ; Sewell, John I. ; Bayruns, Robert

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK

Volume

38

Issue

8

fYear

1991

fDate

8/1/1991 12:00:00 AM

Firstpage

825

Lastpage

837

Abstract

The design of GaAs MESFET technology is discussed. The design techniques developed are illustrated by means of a second-order switched-capacitor bandpass filter designed to operate at a switching frequency of 500 MHz. The design incorporates an operational amplifier architecture with a simulated gain of 60 dB and a switch driver circuit. Amplifiers are characterized in terms of settling time performance, and a general procedure for optimization of the switched-capacitor circuit to maximize switching frequency is presented. Measurements on a fabricated chip confirm the design of the filter and its components

Keywords

III-V semiconductors; Schottky gate field effect transistors; band-pass filters; field effect integrated circuits; gallium arsenide; operational amplifiers; switched capacitor filters; 500 MHz; 60 dB; GaAs; MESFET technology; gain; operational amplifier architecture; second order filters; semiconductors; settling time; switch driver circuit; switching frequency; Band pass filters; Circuit simulation; Design optimization; Gain; Gallium arsenide; MESFETs; Operational amplifiers; Switches; Switching frequency; Testing;

fLanguage

English

Journal_Title

Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0098-4094

Type

jour

DOI

10.1109/31.85625

Filename

85625