• DocumentCode
    1366359
  • Title

    Ultra Heat-Shock Resistant Die Attachment for Silicon Carbide With Pure Zinc

  • Author

    Suganuma, K. ; Kim, S.

  • Author_Institution
    Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki, Japan
  • Volume
    31
  • Issue
    12
  • fYear
    2010
  • Firstpage
    1467
  • Lastpage
    1469
  • Abstract
    An ultra heat-shock resistant die-attach structure for a silicon carbide power device was developed. A silicon carbide die with a gold/titanium nitride coating was soldered with pure zinc onto a DBC with a silicon nitride insulator plate. This die-attach structure could resist severe thermal shock in air temperatures between -50°C and 300°C. No substantial change in microstructure was observed at the soldering interface, while conventional high-lead solder forms severe cracking. This die-attach structure can be also applied to other types of high-temperature device applications.
  • Keywords
    microassembling; soldering; zinc; air temperature; gold/titanium nitride coating; microstructure; pure zinc; silicon carbide die; silicon carbide power device; silicon nitride insulator plate; soldering interface; thermal shock; ultra heat-shock resistant die attachment; ultra heat-shock resistant die-attach structure; Microassembly; Power semiconductor devices; Resistance; Silicon carbide; Thermal factors; Die bonding; power semiconductor devices; silicon carbide; thermal shock;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2081338
  • Filename
    5617212