Electron and neutron radiation damage effects on a two-phase CCD

Author

Stefanov, K.D. ; Tsukamoto, T. ; Miyamoto, A. ; Sugimoto, Y. ; Tamura, N. ; Abe, K. ; Nagamine, T. ; Aso, T.

Author_Institution

Dept. of Phys., Saga Univ., Japan

Volume

47

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

1280

Lastpage

1291

Abstract

Surface and bulk radiation damage effects on a two-phase charge-coupled device (CCD), operated in a multipinned phase (MPP) mode have been evaluated. Two-phase CCD´s are one of the candidates for application in the vertex detector of a future linear collider. Flat-band voltage shifts, dark current, dark current spikes, and charge transfer efficiency (CTE) were studied on devices subjected to irradiation with fluences reaching 4.3×10¹² electrons/cm² and 8.9×10⁹ neutrons/cm². An additional source of dark signal in electron irradiated devices was observed and explained by impact ionization by holes, released by tunneling from defect states near the Si-SiO₂ interface. A model for the CTE in a two-phase CCD as a function of temperature, background charges, and clock timing is described. Calculations based on the model are in good agreement with the experimentally determined values of CTE in electron and neutron irradiated CCD´s

Keywords

CCD image sensors; dark conductivity; defect states; electron beam effects; impact ionisation; neutron effects; position sensitive particle detectors; Si-SiO₂; charge transfer efficiency; dark current spikes; defect states; electron radiation damage effects; impact ionization; multipinned phase; neutron radiation damage effects; two-phase CCD; vertex detector; Charge carrier processes; Charge coupled devices; Charge transfer; Dark current; Detectors; Electrons; Impact ionization; Neutrons; Tunneling; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.856466

Filename

856466