Effect of collector structure on the FBSOA of the dielectrically-isolated LIGBT

Author

Nagapudi, Venkatesh ; Sunkavalli, Ravishankar ; Baliga, B.Jayant

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

45

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

1155

Lastpage

1161

Abstract

In this paper, the dependence of the forward biased safe operating area (FBSOA) on the collector structures of the dielectrically-isolated (DI) lateral insulated gate bipolar transistor (LIGBT) has been analyzed. In addition to the on-state and switching characteristics, pulsed measurements were performed to determine the FBSOA of these devices. Two-dimensional (2-D) numerical simulations were performed to understand the physics behind the operation of devices fabricated with various collector designs. These studies reveal that some of the structures behave like the conventional LIGBT, while others behave like the LDMOSFET with respect to their FBSOA. Some of the structures also exhibit a unique high-voltage blocking ability while carrying current, while having much smaller breakdown voltages

Keywords

electric breakdown; insulated gate bipolar transistors; isolation technology; power integrated circuits; power transistors; semiconductor device models; 2D numerical simulations; FBSOA; HV power IC applications; breakdown voltages; collector structure effect; dielectrically-isolated LIGBT; forward biased SOA; high-voltage blocking ability; insulated gate bipolar transistor; lateral IGBT; onstate characteristics; pulsed measurements; safe operating area; switching characteristics; Dielectric measurements; Dielectric substrates; Fabrication; Insulated gate bipolar transistors; Medical simulation; Numerical simulation; Performance evaluation; Physics; Pulse measurements; Wafer bonding;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.669579

Filename

669579