• DocumentCode
    1368234
  • Title

    Device physics using the method of moments

  • Author

    Lonngren, Karl E. ; Schwartz, Peter V. ; Bai, Er-Wei

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
  • Volume
    41
  • Issue
    2
  • fYear
    1998
  • fDate
    5/1/1998 12:00:00 AM
  • Firstpage
    112
  • Lastpage
    115
  • Abstract
    The method of moments, which is well known in the area of electromagnetics, can also be applied to the area of device physics in undergraduate education. In this paper, the p-n junction is analyzed using the method of moments applied to discrete charges and distributed charges
  • Keywords
    electric charge; electronic engineering education; method of moments; p-n junctions; semiconductor device models; depletion-layer charge distribution; device physics; discrete charges; distributed charges; electromagnetics; method of moments; p-n junction; undergraduate education; Cities and towns; Conducting materials; Electromagnetic devices; Electrostatics; Equations; Helium; Moment methods; P-n junctions; Physics; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Education, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9359
  • Type

    jour

  • DOI
    10.1109/13.669721
  • Filename
    669721