Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop

Author

Uznanski, Slawosz ; Gasiot, Gilles ; Roche, Philippe ; Autran, Jean-Luc ; Ferlet-Cavrois, Veronique

Author_Institution

Technol. R&D, STMicroelectronics, Crolles, France

Volume

57

Issue

6

fYear

2010

Firstpage

3267

Lastpage

3272

Abstract

Charge sharing in a dual-interlocked storage cell (DICE) Flip-Flop (FF) manufactured in 65 nm CMOS Bulk is analyzed using a new proprietary Monte-Carlo tool suite named TIARA (Tool suIte for rAdiation Reliability Assessment). Monte-Carlo simulations show the simultaneous charge collection by transistors in the same well is 5 X more important than charge sharing in different wells. Additionally, TIARA simulations are used to identify layout weaknesses. Subsequent layout modifications have increased the threshold LET by 50%.

Keywords

CMOS integrated circuits; Monte Carlo methods; flip-flops; radiation effects; radiation hardening (electronics); transistor circuits; CMOS bulk technology; DICE; Monte-Carlo based charge sharing; RHBD flip-flop; TIARA simulations; Tool Suite For Radiation Reliability Assessment; charge collection; dual-interlocked storage cell; layout modifications; radiation hardened-by-design; size 65 nm; Flip-flops; MOSFETs; Monte Carlo methods; Radiation hardening; Semiconductor process modeling; Single event upset; Charge sharing; DICE; Monte-Carlo simulation; SEU cross-section; radiation-hardened-by-design;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2073486

Filename

5618603