DocumentCode
1368323
Title
Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFETs
Author
Tseng, Ying-Che ; Huang, Wen-Ling M. ; Welch, Pamela J. ; Ford, Jenny M. ; Woo, Jason C S
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume
19
Issue
5
fYear
1998
fDate
5/1/1998 12:00:00 AM
Firstpage
157
Lastpage
159
Abstract
Low-frequency (LF) noise overshoot has been empirically correlated with the frequency dependence of the kink effect in floating body SOI MOSFETs. Based on the correlation between these unique ac characteristics in SOI, a new mechanism is proposed to explain the well-known kink-related noise overshoot. Also, device solutions for suppressing LF noise overshoot will be discussed.
Keywords
MOSFET; electric noise measurement; semiconductor device models; semiconductor device noise; silicon-on-insulator; AC characteristics; AC kink; device solutions; floating body SOI MOSFETs; frequency dependence; low-frequency noise overshoot; 1f noise; CMOS technology; Frequency dependence; Immune system; Low-frequency noise; MOSFET circuits; Noise generators; Phase noise; Radio frequency; Semiconductor device noise;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.669734
Filename
669734
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