• DocumentCode
    1368639
  • Title

    Progress toward a metal-base transistor

  • Author

    Poate, J.M. ; Dynes, Robert C.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    23
  • Issue
    2
  • fYear
    1986
  • Firstpage
    38
  • Lastpage
    42
  • Abstract
    Interest has been revived in the silicon metal-base transistor because of significant progress in growing thin, single-crystal metal films on silicon. The unique properties of silicides are described and the possibility of attaining ballistic transport in silicides is discussed. The use of the metal-base transistor as a physical probe is considered.
  • Keywords
    bipolar transistors; elemental semiconductors; silicon; Si metal base transistor; ballistic electron transport; physical probe; semiconductors; silicides; single-crystal metal films; Cobalt; Crystals; Films; Silicides; Silicon; Transistors;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1986.6370998
  • Filename
    6370998
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1368639