HEMT-HBT matrix amplifier

Author

Paoloni, Claudio

Author_Institution

Dipt. di Energia Elettrica, Rome Univ., Italy

Volume

48

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1308

Lastpage

1312

Abstract

A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) is proposed in this paper. The amplifier includes HEMTs in the first tier and HBTs in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower dc power consumption without remarkable gain and bandwidth reduction, maintaining the advantage of using HEMTs in the first tier. A theory to demonstrate that the amplifier performance can be optimized if the HBTs in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented

Keywords

HEMT integrated circuits; MMIC amplifiers; distributed amplifiers; heterojunction bipolar transistors; wideband amplifiers; HEMT-HBT matrix amplifier; MMIC amplifiers; amplifier performance; bandwidth reduction; dc power consumption; distributed amplifiers; gain reduction; Bandwidth; Energy consumption; Frequency; HEMTs; Heterojunction bipolar transistors; MODFETs; Noise figure; Power transmission lines; Transmission line matrix methods; Transmission line theory;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.859474

Filename

859474