Design and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches

Author

Maruhashi, Kenichi ; Mizutani, Hiroshi ; Ohata, Keiichi

Author_Institution

Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan

Volume

48

Issue

8

fYear

2000

fDate

8/1/2000 12:00:00 AM

Firstpage

1313

Lastpage

1317

Abstract

This paper describes design consideration and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches. The switches show broad-band on/off characteristics up to 60 GHz without using inductors; thus, robust circuit design is possible for a switched-line phase shifter. To determine circuit topology, we introduce a schematic design approach. As a result, desired phase shift as well as good matching characteristics can be realized. The developed 4-bit monolithic phase shifter demonstrates an overall phase deviation less than 5° rms and an insertion loss variation less than 0.65 dB rms from 33 to 35 GHz. For all 16 states, the insertion loss is measured to be 13.1±1.1 dB and the VSWR is less than 1.6. The chip size of the monolithic phase shifter is 2.5 mm×2.2 mm

Keywords

MMIC phase shifters; field effect MIMIC; field effect transistor switches; impedance matching; integrated circuit design; millimetre wave phase shifters; 12 to 14.2 dB; 30 to 60 GHz; Ka-band; VSWR; broad-band on/off characteristics; chip size; circuit topology; insertion loss variation; matching characteristics; monolithic phase shifter; nonresonant FET switches; phase deviation; robust circuit design; schematic design approach; switched-line phase shifter; Circuit synthesis; Circuit topology; FETs; Inductors; Insertion loss; Loss measurement; Phase shifters; Robustness; Switches; Switching circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.859475

Filename

859475