DocumentCode
1371030
Title
Reliable State Retention-Based Embedded Processors Through Monitoring and Recovery
Author
Yang, Sheng ; Khursheed, Saqib ; Al-Hashimi, Bashir M. ; Flynn, David ; Idgunji, Sachin
Author_Institution
Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
Volume
30
Issue
12
fYear
2011
Firstpage
1773
Lastpage
1785
Abstract
State retention power gating and voltage-scaled state retention are two effective design techniques, commonly employed in embedded processors, for reducing idle circuit leakage power. This paper presents a methodology for improving the reliability of embedded processors in the presence of power supply noise and soft errors. A key feature of the method is low cost, which is achieved through reuse of the scan chain for state monitoring, and it is effective because it can correct single and multiple bit errors through hardware and software, respectively. To validate the methodology, ARM® Cortex™-M0 embedded microprocessor (provided by our industrial project partner) is implemented in field-programmable gate array and further synthesized using 65-nm technology to quantify the cost in terms of area, latency, and energy. It is shown that the proposed methodology has a small area overhead (8.6%) with less than 4% worst-case increase in critical path and is capable of detecting and correcting both single bit and multibit errors for a wide range of fault rates.
Keywords
embedded systems; fault diagnosis; field programmable gate arrays; integrated circuit design; integrated circuit noise; integrated circuit reliability; leakage currents; microprocessor chips; power aware computing; power supplies to apparatus; power supply circuits; ARM® Cortex-MO embedded microprocessor; design techniques; embedded processors reliability; fault rates; field-programmable gate array; idle circuit leakage power; multiple bit errors; power supply noise; reliable state retention-based embedded processors; scan chain; single bit errors; soft errors; state monitoring; state retention power gating; voltage-scaled state retention; Error analysis; Gate leakage; Power system control; Reliability; Voltage control; Error correction; power gating; reliability; state retention; voltage scaling; voltage-scaled state retention;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2011.2166590
Filename
6071090
Link To Document