Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

Author

Rengel, Raúl ; Martín, María J. ; Danneville, François

Author_Institution

Appl. Phys. Dept., Univ. of Salamanca, Salamanca, Spain

Volume

32

Issue

1

fYear

2011

Firstpage

72

Lastpage

74

Abstract

A study of the high-frequency noise performance of laterally asymmetric channel (LAC) MOSFETs and conventional devices is presented. Particular attention is paid to the investigation of the influence of the intrinsic noise sources on the noise performance of the transistors. The improvement in the minimum noise figure of the LAC transistor as compared to a conventional MOSFET is analyzed in terms of reduced induced gate noise, higher cross correlation of drain and gate current fluctuations, and the enhancement of the device transconductance.

Keywords

MOSFET; integrated circuit noise; RF noise; device transconductance; gate current fluctuation; intrinsic noise sources; laterally asymmetric channel MOSFET; microscopic modeling; reduced induced gate noise; Correlation; Logic gates; MOSFETs; Noise; Performance evaluation; Radio frequency; Intrinsic noise sources; Monte Carlo modeling; RF performance; laterally asymmetric channel (LAC) MOSFET; minimum noise figure $(NF_{min})$;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2082488

Filename

5623298