• DocumentCode
    1371525
  • Title

    Multi-stacked quantum dot resonant-cavity photodetector operating at 1.06 μm

  • Author

    Baklenov, O. ; Nie, H. ; Anselm, K.A. ; Campbell, J.C. ; Streetman, B.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • Volume
    34
  • Issue
    7
  • fYear
    1998
  • fDate
    4/2/1998 12:00:00 AM
  • Firstpage
    694
  • Lastpage
    695
  • Abstract
    A resonant-cavity pin photodiode with two quantum dot absorbing regions is described. Each absorbing region consists of a stack of five self-assembled, quantum-dot layers, that are formed by the deposition of six monolayers of In0.5Ga0.5As with GaAs spacer layers. To optimise the responsivity, the quantum dot stacks are placed at the antinodes of the cavity. The peak efficiency is 65% at 1.06 μm with a spectral bandwidth of 1.3 nm
  • Keywords
    photodetectors; 1.06 micron; 65 percent; In0.5Ga0.5As-GaAs; multi-stacked quantum dot resonant-cavity photodetector; pin photodiode; self-assembled layer; spectral bandwidth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980487
  • Filename
    673807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1371525