DocumentCode
1371574
Title
Current-dependent collector resistance of the bipolar transistor in quasi-saturation
Author
Dai, Y. ; Yuan, J.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Volume
145
Issue
2
fYear
1998
fDate
4/1/1998 12:00:00 AM
Firstpage
66
Lastpage
70
Abstract
The analytical collector resistance model is derived from device physics. The MEDICI simulation is employed to justify the assumptions used in the model derivation. The high-current collector current spreading effect on the collector resistance is accounted for, and the predictions of the collector current, using the current-dependent collector resistance model are compared with the experimental data. Good agreement between the model predictions and experimental data has been obtained
Keywords
bipolar transistors; current density; digital simulation; semiconductor device models; MEDICI simulation; bipolar transistor; current-dependent collector resistance; high-current collector current spreading effect; model predictions; quasi-saturation;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings -
Publisher
iet
ISSN
1350-2409
Type
jour
DOI
10.1049/ip-cds:19981668
Filename
674072
Link To Document